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Si4104DY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A) a
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
100
0.105 at V GS = 10 V
4.6
8.5 nC
? TrenchET ? Power MOSFET
? 100 % R g Tested
? 100 % Avalanche Tested
? Compliant to RoHS Directive 2002/95/EC
SO-8
APPLICATIONS
? High Frequency DC/DC Converter
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
? High Frequency Boost Converter
? LED Backlight for LCD TV
D
G
Top V ie w
Orderin g Information: Si4104DY-T1-E3 (Lead (P b )-free)
Si4104DY -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
100
± 20
4.6
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
3.7
3.2 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
2.6 b, c
15
4.1
2.0 b, c
9
4
A
mJ
T C = 25 °C
5.0
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.2
2.5 b, c
W
T A = 70 °C
1.6 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient b, d t ≤ 10 s
Maximum Junction-to-Foot (Drain) Steady State
Symbol
R thJA
R thJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69936
S09-0764-Rev. B, 04-May-09
www.vishay.com
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